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| GaAs SPDT Switch DC-6 GHz s s s s MASW6010G V 2.00 Low Insertion Loss, 0.5 dB Typical @ 4 GHz Fast Switching Speed, 4ns Typical Ultra Low DC Power Consumption Integral Static Protection Guaranteed Specifications** @25C*** Frequency Range MHz Insertion Loss DC - 1.0 GHz DC - 2.0 GHz DC - 6.0 GHz Isolation DC - 1.0 GHz DC - 2.0 GHz DC - 6.0 GHz VSWR DC - 1.0 GHz DC - 2.0 GHz DC - 6.0 GHz 1.1:1 Max 1.2:1 Max 1.9:1 Max 45 dB Min 38 dB Min 22 dB Min Loss (dB) DC - 6000 0.6 dB Max 0.8 dB Max 1.4 dB Max Typical Performance @ +25C Insertion Loss (dB) Insertion Loss 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 3 +25C +85C -55C Frequency GHz Frequency GHz 4 5 6 7 Isolation @ +25C Isolation @ +25C Operating Characteristics Loss (dB) 80 70 Impedance Switching Characteristics tRISE, tFALL (10/90% or 90/10% RF) tON, tOFF (50% CTL to 90/10% RF) Transients (In-Band) Input Power for 1 dB Compression Control Voltages (Vdc) Above 500 MHz 100 MHz 0/-5 +27 dBm +21 dBm 50 Nominal 2 ns Typ 4 ns Typ 10 mV Typ 0/-8 +33 dBm Typ +26 dBm Typ 60 50 40 30 20 0 1 2 3 4 5 6 7 Frequency GHz Frequency GHz VSWR @ +25C MASW6010 NP VSWR 2.0 1.8 1.6 VSWR Intermodulation Intercept Point (for two-tone input power up to +5 dBm) Intercept Points IP2 Above 500 MHz 100 MHz +68 dBm +62 dBm 1.4 1.2 1.0 IP3 +46 dBm Typ +40 dBm Typ 0 1 Frequency GHz Frequency GHz 2 3 4 5 6 7 Control Voltages (Complementary Logic) V INLow 0 to -0.2V @ 20 A Max V INHi -5V @ 50 A Typ to -8V @ 300 A Max Die Size 0.031" x 0.031" x 0.010" (0.80mm x0.80mm x 0.25mm) Schematic * Equivalent to Anzac SW200 ** All specifications apply with 50 impedance connected to all RF ports, 0 and -8 Vdc control voltages. *** Loss change 0.0025 dB/C. (From -55C to +85C) Handling, Mounting, Bonding Procedure MASW6010G V 2.00 Handling Precautions Permanent damage to the MASW6010 may occur if the following precautions are not adhered to: A. Cleanliness - The MASW6010 should be handled in a clean environment. DO NOT attempt to clean unit after the MASW6010 is installed. B. Static Sensitivity - All chip handling equipment and personnel should be DC grounded. A B VinLow VinHi Truth Table Control Input Condition Of Switch RFCommon To Each RF Port RF1 On Off RF2 Off On C. Transient - Avoid instrument and power supply transients while bias is applied to the MASW6010.Use shielded signal and bias cables to minimize inductive pick-up. D. Bias - Apply voltage to either control port A/B or only when the other is grounded. Neither port should be allowed to "float". E. General Handling - It is recommended that the MASW6010 chip be handled along the long side of the die with a sharp pair of bent tweezers. DO NOT touch the surface of the chip with fingers or tweezers. V inHi V inLow Vin Low 0 to -0.2V VinHi -5V to -8V Maximum Ratings A. Control Voltage (A / B): -8.5 Vdc B. Max Input RF Power: +42 dBm (500 MHz - 6 GHz) C. Storage Temperature: -65C to +175C D. Maximum Operating Temperature: +175C Mounting The MASW6010 is back-metallized with Pd/Ni/Au (100/1,000/ 30,000A) metallization.It can be die-mounted with AuSn eutectic preforms or with thermally conductive epoxy. The package surface should be clean and flat before attachment. Eutectic Die Attach: A. A 80/20 gold/tin preform is recommended with a work surface temperature of approximately 255C and a tool temperature of 265C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be approximately 290C. B. DO NOT expose the MASW6010 to a temperature greater than 320C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: A. Electrically conductive epoxy must be used. B. Apply a minimum amount of epoxy and place the MASW6010 into position. A thin epoxy fillet should be visible around the perimeter of the chip. C. Cure epoxy per manufacturer's recommended schedule. Bonding Pad Dimensions Inches (mm) RFcom: 0.004 x 0.004 (0.100 x 0.100) RF2,RF3: 0.004 x 0.004 (0.100 x 0.100) A,B: 0.004 x 0.004 (0.100 x 0.100) GND1,GND2: 0.012 x 0.004 (0.300 x 0.100) Die Size Inches (mm) 0.031 x 0.031 x 0.010 (0.80 x 0.80 x 0.25) Wire Bonding A. Ball or wedge bond with 1.0 mil diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels to achieve reliable wirebonds. B. Wirebonds should be started on the chip and terminated on the package. |
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